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1 of 22 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rf mems ldmos power amplifier switch gnd gnd nc gnd gnd nc gnd gnd gnd nc gnd rfin hb rfin lb vramp tx enable gpctrl0 gpctrl1 vbatt gnd antenna rx0 rx1 cmos controller esd protection 78 6 5 4 3 2 122 20 19 18 17 16 15 14 13 12 11 10 9 21 RF9801 dual-band egsm900/dcs1800/gsm/ gprs/linear edge transmit module the RF9801 is a dual band (egsm900/dc s1800) gsm/gprs/linear edge, class 12 compliant transmit module with two symmetrical receive ports. this transmit module builds upon rfmd?s successful rf716x family incorporating full edge capability while maintaining a common footprint for ease of phone platform design. the RF9801 continues to build upon rfmd?s leading patented powerstar? archi- tecture to include such features as power flattening circuit, v ramp filtering, v batt tracking, and edge low power mode. the module includes a multi-function cmos controller, gaas hbt power amplifier, and phemt front end antenna switch. the amplifier devices are manufactured on rfmd?s advance gallium arsenide hetero- junction bipolar transistor (gaas hbt) proc ess, which is designed to operate either in saturated mode for gmsk or linear mode for edge 8psk signaling. the highly integrated transmit module simplifies the phone design by eliminating the need for complicated control loop design, output rf spectrum, (orfs) optimization, har- monic filtering, and component matching, all of which combine to provide best in class rf performance, solution size, and ease of implementation for cellular phone systems. the rf ports are 50 ? matched and the antenna port includes esd pro- tection circuitry which meets the string ent 8kv industry standards requiring no additional components. all of these eliminated factors help to improve the cus- tomer?s product time to market. features ? dual mode operation ? proven powerstar ? architecture ? integrated power flattening circuit ? integrated v ramp filter ? digital bias control ? edge low current mode ? no external routing ? symmetrical rx ports ? high gain supports low drive level ? pin compatibility with rf716x family ? robust 8kv esd protection at antenna port ? integrated v batt tracking circuit applications ? egsm900/dcs1800 prod- ucts ? 3v dual-band gsm/gprs/ edge handsets ? mobile gprs/edge data products ? portable battery-powered equipment ? gprs class 12 compliant ds100428 ? ? ? package style: module 6.63mmx5.24mmx1.0mm
2 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit supply voltage -0.3 to +6.0 v power control voltage (v ramp ) -0.3 to +1.8 v input rf power +10 dbm max duty cycle 50 % output load vswr 20:1 operating case temperature -20 to +85 c storage temperature -55 to +150 c parameter specification unit condition min. typ. max. esd esd rf ports 1000 v hbm, jesd22-a114 1000 v cdm, jedec jesd22-c101 esd antenna port 8 kv iec 61000-4-2 esd any other port 1000 v hbm, jesd22-a114 1000 v cdm, jedec jesd22-c101 overall power control v ramp power control ?on? 1.8 v max. p out power control ?off? 0.25 v min. p out v ramp input capacitance 15 20 pf dc to 200khz v ramp input current 10 ? av ramp =v ramp max power control range 50 db v ramp =0.25v to v ramp max overall power supply power supply voltage 3.2 3.6 4.2 v operating limits power supply current 1 20 ? ap in <-30dbm, tx enable=low, v ramp =0.25v, temp=-20c to +85c, v batt =4.2v overall control signals gpctrl0, gpctrl1 ?low? 0 0 0.5 v gpctrl0, gpctrl1 ?high? 1.25 2.0 3.0 v gpctrl0, gpctrl1 ?high current? 1 2 ua tx enable ?low? 0 0 0.5 v tx enable ?high? 1.25 2.0 3.0 v tx enable ?high current? 1 2 ua rf port input and output imped- ance 50 ? table 1: module control + antenna switch logic tx_en gpctrl1 gpctrl0 control mode 000 standby 010 rx 0 011 rx 1 1 1 0 tx egsm900 gmsk 1 1 1 tx dcs1800 gmsk 1 0 0 tx egsm900 8psk 1 0 1 tx dcs1800 8psk caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. egsm900 band gmsk mode nominal conditions used unless otherwise stated. v batt =3.6v, p in =1dbm, temp=+25c, duty cycle=25%. all unused ports=50 ? . refer to logic table for mode of operation. operating frequency range 880 915 mhz input power -2 +1 +4 dbm full p out guaranteed at minimum drive level. input vswr 2:1 3:1 over p out range (5dbm to 33dbm) maximum output power 33.0 33.7 dbm duty cycle=25%, pulse width=1154 ? s 31 dbm v batt =3.2v to 4.2v, p in =-2dbm to +4dbm, temp=-20c to +85c, duty cycle=50%, pulse width=2308 ? s, v ramp ? 1.8v minimum power into 3:1 vswr 30.0 dbm minimum power delivered to the load over 360 phase sweep. power added efficiency 36 41 % set v ramp =v ramp rated for p out =33dbm 2nd harmonic -40* -33 dbm v ramp =v ramp rated for p out =33dbm. *typical value measured from worst case harmonic fre- quency across the band. 3rd harmonic -40* -33 dbm v ramp =v ramp rated for p out =33dbm. *typical value measured from worst case harmonic fre- quency across the band. all other harmonics up to 12.75ghz -33 dbm v ramp =v ramp rated for p out =33dbm non-harmonic spurious up to 12.75ghz -36 dbm v ramp =v ramp rated for p out =33dbm, also over all power levels (5dbm to 33dbm) forward isolation 1 -54 -41 dbm tx enable=low, p in =4dbm, v ramp =0.25v forward isolation 2 -28 -15 dbm tx enable=high, p in =4dbm, v ramp =0.25v output noise power 925mhz to 935mhz -87 -77 dbm p out =33dbm, rbw=100khz 935mhz to 960mhz -89 -83 dbm 1805mhz to 1880mhz -115 -87 dbm output load vswr stability (spurious emissions) -36 dbm vswr=12:1; all phase angles p out < 33dbm into 50 ? load; load switched to vswr=12:1 output load vswr ruggedness no damage or permanent degradation to device vswr=20:1; all phase angles p out =33dbm into 50 ? load; load switched to vswr=20:1
4 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. egsm900 band 8psk mode nominal conditions used unless otherwise stated. v batt =3.6v, temp=+25c, duty cycle=25%, pin adjusted for required p out . all unused ports =50 ? . refer to logic table for mode of operation. operating frequency range 880 915 mhz max linear output power 27.5 dbm meets acpr and evm. nominal conditions. 26.0 dbm meets acpr and evm. extreme conditions: v batt =3.2v to 4.2v, temp=-20c to +85c. 15.0 dbm meets acpr and evm. extreme conditions; low power mode.v ramp =0v gain: high power mode 30.5 33.5 35.5 db p out =27.5dbm, v ramp =1.8v gain: low power mode 31.5 db p out =5dbm, v ramp =0v current: high power mode 900 1300 ma p out =27.5dbm, v ramp =1.8v current: low power mode 300 ma p out =5dbm, v ramp =0v efficiency: high power mode 12 18 % p out =27.5dbm, v ramp =1.8v acpr (400khz): high power mode bw=30khz -60 -57 dbc p out =5dbm to 27.5dbm, v ramp =1.8v -60 -56 dbc p out =5dbm to 26.0dbm, v ramp =1.8v v batt =3.2v to 4.2v temp=-20c to +85c evm (rms): high power mode 1 4 % p out =5dbm to 27.5dbm, v ramp =1.8v 5%p out : 5dbm to 26.0dbm, v ramp =1.8v v batt =3.2v to 4.2v temp=-20c to +85c output noise power 925mhz to 935mhz -86 -77 dbm p out =27.5dbm, rbw=100khz 935mhz to 960mhz -86 -83 dbm 1805mhz to 1880mhz -115 -87 dbm output load vswr stability (spurious emissions) -36 dbm vswr=12:1; all phase angles p out < 27.5dbm into 50 ? load; load switched to vswr=12:1
5 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. dcs1800 band gmsk mode nominal conditions used unless otherwise stated. v batt =3.6v, p in =1dbm, temp=+25c, duty cycle=25%, pin adjusted for required p out . all unused ports=50 ? . refer to logic table for mode of operation. operating frequency range 1710 1785 mhz input power -2 +1 +4 dbm full p out guaranteed at minimum drive level. input vswr 2:1 2.5:1 over p out range (0dbm to 30dbm) maximum output power 30.0 31.0 dbm duty cycle=25%, pulse width=1154 ? s 28 dbm v batt =3.2v to 4.2v, p in =-2dbm to +4dbm, temp=-20c to +85c, duty cycle=50%, pulse width=2308 ? s, v ramp ? 1.8v minimum power into 3:1 vswr 27.0 dbm the measured delivered output power to the load with the mismatch loss already taken into account with 1db variation margin. power added efficiency 32 36 % set v ramp =v ramp rated for p out =30dbm 2nd harmonic -40* -33 dbm v ramp =v ramp rated for p out =30dbm. *typical value measured from worst case harmonic fre- quency across the band. 3rd harmonic -40* -33 dbm v ramp =v ramp rated for p out =30dbm. *typical value measured from worst case harmonic fre- quency across the band. all other harmonics up to 12.75ghz -33 dbm v ramp =v ramp rated for p out =30dbm non-harmonic spurious up to 12.75ghz -36 dbm v ramp =v ramp rated for p out =30dbm, also over all power levels (0dbm to 30dbm) forward isolation 1 -70 -53 dbm tx enable=low, p in =4dbm, v ramp =0.25v forward isolation 2 -30 -15 dbm tx enable=high, p in =4dbm, v ramp =0.25v output noise power 925mhz to 935mhz -98 -77 dbm p out =30dbm, rbw=100khz 935mhz to 960mhz -98 -83 dbm 1805mhz to 1880mhz -92 -79 dbm output load vswr stability (spurious emissions) -36 dbm vswr=12:1; all phase angles p out < 30dbm into 50 ? load; load switched to vswr=12:1 output load vswr ruggedness no damage or permanent degradation to device vswr=12:1; all phase angles p out < 30dbm into 50 ? load; load switched to vswr=12:1
6 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. dcs1800 band 8psk mode nominal conditions used unless otherwise stated. v batt =3.6v, temp=+25c, duty cycle=25%, pin adjusted for required p out . all unused ports =50 ? . refer to logic table for mode of operation. operating frequency range 1710 1785 mhz max linear output power 26.5 dbm meets acpr and evm. nominal conditions. 25.0 dbm meets acpr and evm. extreme conditions: v batt =3.2v to 4.2v, temp=-20c to +85c. 13.0 dbm meets acpr and evm. extreme conditions; low power mode.v ramp =0v gain: high power mode 31.5 34.5 36.5 db p out =26.5dbm, v ramp =1.8v gain: low power mode 32.0 db p out =0dbm, v ramp =0v current: high power mode 975 1300 ma p out =26.5dbm, v ramp =1.8v current: low power mode 250 ma p out =0dbm, v ramp =0v efficiency: high power mode 9.5 13 % p out =26.5dbm, v ramp =1.8v acpr (400khz): high power mode bw=30khz -66 -57 dbc p out =0dbm to 26.5dbm, v ramp =1.8v -66 -56 dbc p out =0dbm to 25.0dbm, v ramp =1.8v v batt =3.2v to 4.2v temp=-20c to +85c evm (rms): high power mode 1 4 % p out =0dbm to 26.5dbm, v ramp =1.8v 5%p out : 0dbm to 25.0dbm, v ramp =1.8v v batt =3.2v to 4.2v temp=-20c to +85c output noise power 925mhz to 935mhz -95 -77 dbm p out =26.5dbm, rbw=100khz 935mhz to 960mhz -95 -80 dbm 1805mhz to 1880mhz -90 -80 dbm output load vswr stability (spurious emissions) -36 dbm vswr=12:1; all phase angles p out < 26.5dbm into 50 ? load; load switched to vswr=12:1
7 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. rx section nominal conditions used unless otherwise stated. v batt =3.6v, p in =1dbm, temp=+25c, duty cycle=25%. all unused ports=50 ? . refer to logic table for mode of operation. insertion loss gsm900 ant-rx0/ rx1 1.1 1.3 db freq=925mhz to 960mhz. see note 1. in-band ripple gsm900 ant-rx0/rx1 0.2 db freq=925mhz to 960mhz input vswr gsm900 ant-rx0/rx1 1.5:1 freq=925mhz to 960mhz insertion loss dcs1800 ant-rx0/rx1 1.3 1.6 db freq=1805mhz to 1880mhz. see note 1. in-band ripple dcs1800 ant-rx0/rx1 0.2 db freq=1805mhz to 1880mhz input vswr dcs1800 ant-rx0/rx1 1.5:1 freq=1805mhz to 1880mhz tx section switch leakage p out at rx port gsm900 ant-rx0/rx1 0.5 8.0 dbm gsm900 tx mode: freq=880mhz to 915mhz, v ramp =v ramp rated for p out =33dbm at antenna port. see note 2. switch leakage p out at rx port dcs1800 ant-rx0/rx1 3.0 6.0 dbm dcs1800 tx mode: freq=1710mhz to 1785 mhz, v ramp =v ramp rated for p out =30dbm at antenna port. see note 2. note 1: the insertion loss values listed are the values guaranteed at the dut port reference plane (i.e. excludes external mism atch and resis- tive trace losses). note 2: isolation specification set to ensure at least the following isolation at rated power: calculation example using typical values: p out at antenna-p out at rx port. isolation lb=33-8=25db, hb=30-6=24db.
8 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pin function description 1gnd pin connected to module ground. 2rfin hb rf input to the dcs1800 band. this is a 50 ? input. 3gnd pin connected to module ground. 4rfin lb rf input to the gsm900 band. this is a 50 ? input. 5gnd pin connected to module ground. 6gnd pin connected to module ground. 7vramp v ramp ramping signal from dac. a simple rc filter is integrated into the RF9801 module. v ramp may or may not require additional filtering depending on the baseband selected. 8 tx enable this signal enables the pa module for operation with a lo gic high. the switch is put in tx mode determined by gpctrl0 and gpctrl1. 9gpctrl0 control pin that together with gpctrl1 selects mode of operation. 10 gpctrl1 control pin that together with gpctrl0 selects mode of operation. 11 vbatt power supply for the module. this should be connected to the battery terminal using as wide a trace as possible. 12 nc no connection. 13 gnd pin connected to module ground. 14 gnd pin connected to module ground. 15 antenna antenna port. 16 nc no connection. 17 rx1 rx1 port of antenna switch. this is a 50 ? output. rx1 is interchangeable with rx0. 18 rx0 rx0 port of antenna switch. this is a 50 ? output. rx0 is interchangeable with rx1. 19 nc no connection. 20 gnd pin connected to module ground. 21 gnd pin connected to module ground. 22 gnd pin connected to module ground. 23 gnd pin connected to module ground.
9 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pin out (top view) 1 8 9 10 16 11 17 18 3 rfin hb gnd gnd gnd rx0 gnd vbatt 7 nc 2 gnd 4 5 rfin lb 6 12 rx1 13 nc 14 antenna 19 gpctrl1 20 gpctrl0 21 tx enable 22 vramp 15 gnd 23 23 gnd gnd gnd gnd gnd nc
10 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . theory of operation overview the RF9801 is designed for use as the final portion of the tr ansmit section in mobile phones covering the egsm900 and dcs1800 frequency bands. the RF9801 is a high power, dual mode gsm/edge, power amplif ier module containing rfmd's patented powerstar? architecture. the module includes a mult i-function cmos controller, gaas hbt power amplifier, and phemt front end antenna switch. the integrated power control loop can be driven directly from the baseband dac to provide a very predictable power output which enables handset manufactur ers to achieve simple and efficient phone calibration in pro- duction. additional features power flattening circuit when a mismatch is presented to the antenna of the phone, the output impedance presented to the pa also varies resulting in variation of output power and current. this can compromise th e pa's ability to maintain the minimum output power required for calls, and limit the total radiated power (trp), to meet the requirements of governmental agencies and cellular service pro - viders. the pfc sets a reference voltage into 50 ? and the internal feedback loop corre cts for impedance variation by reducing the power and current variation into mismatch conditions. v ramp filtering: the v ramp control voltage is received from the baseband dac. the dac signal is usually in the form of a staircase waveform related to the dac bit resolution and the timing of the power st eps. the staircase waveform usually requires some filtering to smooth out the waveform and reduce any unwanted spectral comp onents showing up in the switching spectra of the rf output signal. a simple rc filter maybe integrated into the baseband, tr ansmit module or with discrete components between the two. v batt tracking/v ramp limiter this circuit monitors the relationship of the battery voltage and v ramp /v cc used to control the pa. at low v batt levels the fet pass-device which controls v cc can enter into a saturation region which can increase switching transients. the saturation detection circuit automatically monitors the batt ery voltage and produces a correction so that v cc is reduced, thus preventing the power control loop from reaching saturation and inducing switching transients. edge low power option in edge mode the pa operates in the linear region and the p out is controlled by the p in . since the phone tends to operate most of its time in the lower to mid power ranges the bias ca n be adjusted to optimize efficiency. the RF9801 quiescent cur- rent can be changed in the power amplifier when operating at lower output power levels by adjusting v ramp .
11 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . modes of operation: satura ted gmsk and linear edge the design of a dual mode power amplifier module is a chal lenging process involving many circuit compromises and perfor- mance tradeoffs to allow best performanc e in both the saturated and linear operating regions. this is most demanding in achieving best performance between gsm effi ciency and edge linearity requirements. in gsm mode, the gmsk modulation is a cons tant envelope and the useful data is enti rely included in the phase of the signal. since the constant envelope is not sensitive to amplitude non-li nearities caused by the pa, the amplifier can operate in satura - tion mode (deep class ab or cl ass c) for optimum efficiency. in edge mode, the 8psk signal has information encoded in both amplitude and phase, which requ ires a linear power amplifier (class a) to transfer the 8psk modulation with minimal distortion. in a dual mode module, tuning of the load line must be bala nced between gsm efficiency and edge linearity. the result is slightly lower gsm efficiency than a single mode (saturated on ly) power amplifier module. figure 1 shows the power amplifier operating regions in gsm and edge mode. figure 1. power amplifier oper ating regions in gsm/edge mode edge 8-psk gsm gmsk linear operation saturated operation output power input power p1db 29dbm 35dbm
12 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . gsm (saturated) mode: in gsm mode, RF9801 operates as a traditional powerstar? mo dule. the basic circuit diagram is shown in the figure 2. the control circuit receives a dac voltage (v ramp ) to set the required output power for the phone. the powerstar? i architec- tures multiples the v ramp voltage level and regulates it at the collector (v cc ) of all three stages of the amplifier, holding the stages in saturation. the base bias is fixed at a point that is at least deep class ab or class c. by holding the pa in saturat ion, performance sensitivity is essentially elimin ated to temperature, frequency, voltage and input drive level ensuring robust per- formance within the etsi power vs time mask. the regulation of power is demonstrated in equation 1. the equation shows that load impedance affects output power, but to a lesser degree than the v cc supply variations. since the architecture regulates v cc , the dominant cause of power variation is eliminated. the control loop provides a very linear relationship between v ramp and p out . the rf signal applied at the rfin pin must be a constant amplit ude signal and should be high enough to saturate the amplifier in the gsm mode. the input power (p in ) range is indicated in the specifications. power levels below this range will result in reduced maximum output power and the pote ntial for more variation of output powe r over extreme conditions. higher input power is unnecessary and will require more current in the circ uitry driving the power amplifier further into saturation which could also result in lower output power. edge (linear) mode in edge mode, vramp is fixed and the output power is directly controlled by input power. the rf signal applied to the rfin pin must be accurately co ntrolled to produce the desired output amplitude and burst ramp- ing. the rfin power must be maintained so that the amplifier is operating in its linear region. if the input drive is too high, the amplifier will begin to saturate causing the acpr and evm performa nce to degrade. the most sensitive of these is typically the +/-400khz offset acpr. as the amplifier approaches saturation, this will be the first parameter to show significant degrada- tion. figure 2. basic powerstar ? circuit diagram - + + - v batt 3db bw 300 khz v ramp saturation detector h(s) rf in tx enable rf out v cc p out 10 2 v cc v sat ? ? ?? 8 r 110 3 ? ?? ------------------------------------------- log = equation 1. output power versus voltage relationship
13 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . since the pam operates as a gain block in edge mode, gain vari ation over extreme conditions must be considered when deter- mining the output power that a specific input power will produc e. special attention must be giv en to ensure that the output power of the pa does not go higher than the maximum linear output that the pa can provide with acceptable evm and acpr performance. a large portion of the total current in a linear amplifier is nece ssary to bias the transistors so that the output remains in t he lin- ear region. in an edge system where there is a range of power control levels, an amplifier biased to operate at a high power will be very inefficient at low power levels. conversely, an ampl ifier biased to operate at a low power will not be linear at h igh power levels. refer to the low power mode feature. power on (timing) sequence in the power-on sequence, there are some important set-up times associated with the control signals of the txm. refer to the logic table for control signal functions. one of the critical re lationships is the settling time between txen going high and wh en v ramp can begin to increase. this time is often referred to as the "pedestal" and is required so that the internal power control loop and bias circuitry can settle after being turned on. the powerstar? architecture usually requires approximately 1 ? s to 2s for proper settling of the power control loop. time vbatt gpctrl tx_en vramp 3.2v to 4.2v refer to logic table for correct mode >1.5v pa on 1.8v for max pout ~0.25v for min pout gmsk power on sequence: 1. apply vbatt 2. apply cpctrl 3. apply minimum vramp (?0.25v) 4. apply tx_en 5. apply vramp for desired output power. (refer to power ramping section) rfin can be applied at any time. for good transient response it must be applied before power ramp begins. the power down sequence is the reverse order of the power on sequence. =1.5s =0s =0s vbatt gpctrl tx_en 3.2v to 4.2v refer to logic table for correct mode >1.5v pa on pout = pin + gain 8psk power on sequence: 1. apply vbatt 2. apply cpctrl 3. apply tx_en 4. ramp rfin amplitude for desired output power vramp is a constant dc input and can be applied anytime after vbatt. the power down sequence is the reverse order of the power on sequence. rfin time =1.5s =0s =0s
14 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . power ramping the v ramp waveform must be created such that the output power falls into the etsi power versus time mask. the ability to ramp the rf output power to meet etsi switching transient an d time mask requirements partially depends upon the predict- ability of output power versus v ramp response of the power amplifier. the powerstar? control loop is very capable of meeting switching transient requirements with the prop er raised cosine waveform applied to the v ramp input. ramps usually fall within the 12 ? s to 14 ? s time to control switching transients at high power le vels. faster ramps usually have a steeper transition cre- ating higher transients. slower ramps may have difficulty meetin g the time mask. optimization needs to include all power lev- els as the time mask requirements change with p out levels. the diagram below is the etsi time mask for a single gsm timeslot. ?
15 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . application schematic notes: v batt capacitor value may change depending on application. rxo and rx1 usually connect to saw filters; c4 and c5 may not be needed as some saw filters contain their own dc blocking capability. if placing an attenuation network on the input to the power amplif ier, ensure that it is positioned on the transceiver side of capacitor c1 (or c2) to prevent adversely affecting the base biasing of the power amplifier. 2 8 7 10 11 15 4 pa power control circuit and switch decoder phemt sp4t switch 9 3 5 6 12 14 13 16 19 20 21 22 c1 22 pf rfin hb gpctrl0 tx enable gpctrl1 vramp vbatt c3 22 uf antenna c2 56 pf rfin lb 1 17 18 c5 33 pf c6 33 pf rx1 rx0 esd protection nc nc nc
16 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board schematic notes: c4 is an optional bypass capacitor that is not used on the ev b. c9, c10, and c11 are optional decoupling capacitors which may not be needed in application. rx0 and rx1 usually connect to saw filters. c5 and c6 may not be needed. r4, r5, and r6 are not placed. c12 and c13 are optimization caps to show best case insertion loss. 1 2 3 4 5 6 19 16 12 17 18 20 21 23 13 50 ? ? strip 50 ? ? strip c2 56 pf c1 22 pf 50 ? ? strip 50 ? ? strip j1 hb rf in j2 lb rf in 15 14 7 10 8 22 11 9 r4 dni r5 dni 50 ? ? strip c13 0.5 pf c6 33 pf 50 ? ? strip c12 0.5 pf c5 33 pf 50 ? ? strip 50 ? ? strip j3 rx0 j4 rx1 50 ? ? strip r6 dni j5 ant c4 dni c3 22 ? f + gpctrl1 gpctrl0 vbatt txenable vramp p1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 hdr_1x14 p1-5 vbatt gnd gnd gnd gnd p1-7 vbatt gnd gnd gnd p1-9 gpctrl1 p1-10 gpctrl0 p1-11 txenable p1-12 vramp c9 100 pf gpctrl0 c11 100 pf gpctrl1 c10 100 pf txenable
17 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board layout board size 2.0? x 2.0? notes: all inputs, outputs, and antenna traces are 50 ? micro strip.
18 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . package drawing notes: yy indicates year, ww indicates work week, and trace code is a sequential number assigned at device assembly. shaded areas represent pin 1 location.
19 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb design requirements pcb surface finish the pcb surface finish used for rfmd's qualification process is electroless nickel, immersion gold. typical thickness is 3 ? inch to 8 ? inch gold over 180 ? inch nickel. pcb land pattern recommendation pcb land patterns for rfmd components are based on ipc-735 1 standards and rfmd empirical data. the pad pattern shown has been developed and tested for optimized assembly at rf md. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes va ry from company to company, careful process development is recommended. pcb metal land and solder mask pattern
20 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . tape and reel carrier tape basic dimensions are based on eia 481. the pocket is designed to hold the part for shipping and loading onto smt manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. th e individual pocket design can vary from vendor to vendor, but width and pitch will be consistent. carrier tape is wound or placed onto a shipping reel either 330mm (13 inches) in diameter or 178mm (7 inches) in diameter. the center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. prior to shipping, moisture sensitive parts (msl level 2a-5a) ar e baked and placed into the pockets of the carrier tape. a cove r tape is sealed over the top of the entire length of the carrier tape. the reel is sealed in a moisture barrier esd bag with the appropriate units of desiccant and a humidity indicator card, whic h is placed in a cardboard shipping box. it is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. if the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125c. if baking is required, devices may be baked according to section 4, table 4-1, of joint industry standard ipc/jedec j-std-033. the table below provides information for carrier tape and reel s used for shipping the devices described in this document. tape and reel rfmd part number reel diameter inch (mm) hub diameter inch (mm) width (mm) pocket pitch (mm) feed units per reel RF9801tr13 13 (330) 4 (102) 12 8 single 2500 RF9801tr7 7 (178) 2.4 (61) 12 8 single 750 part number yyww trace code part number yyww trace code part number yyww trace code unless otherwise specified, all dimension tolerances per eia-481. 400 mm leade r direction of feed sprocket holes toward rear of reel 400 mm trailer top view pin 1 location part number yyww trace code figure 1. 5.24mmx6.63mm (carrier tape drawing with part orientation)
21 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information RF9801 dual-band egsm900/dcs1800/gsm/ gp rs/linear edge transmit module RF9801sb transmit module 5-piece sample pack RF9801pcba-41x fully assembled evaluation board rohs compliant: yes package total weight in grams (g): 0.121 compliance date code: - bill of materials revision: - pb free category: e4 pb cd hg cr vi pbb pbde die 000000 molding compound 000000 lead frame 000000 die attach epoxy 000000 wire 000000 solder plating 000000 * directive 2002/95/ec of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment rohs* banned material content bill of materials parts per million (ppm) this rohs banned material content declaration was prepared solely on information, including analytical data, provided to rfmd b y its suppliers, and applies to the bill of materials (bom) revision noted above.
22 of 22 RF9801 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com .

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